| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2a03dd539b34a3f57feca260c04b874
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5397fc5ff75ee49a454558b68b36baa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8bc79aa9005d2c17675380df1a9d0f08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_17ead2b99be391d8dc083cad189db1f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99787004ac9ea5369c73050b45d7d059 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5685 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L47-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-00 |
| filingDate |
2011-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f20a1ba127e0d3027fe3b1c7d939979a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63cbf7d26aef7128366bf1f1f8c5a0cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_901118a2da405d3e67cc47fa8d0daa2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0221bc77a63c3ab12ab81b84a6862e6c |
| publicationDate |
2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8331131-B2 |
| titleOfInvention |
Changing a memristor state |
| abstract |
A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9515261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548741-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785288-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312480-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8558209-B1 |
| priorityDate |
2011-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |