| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_737093e688a170485114afcff3e0c49b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b6bf350aad7e03c7e07477b805106d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2010-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad3f28909ddfdf2ccd69333fe1751e5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e79fb8d28dcbf17ff1cc61eafcba0bc9 |
| publicationDate |
2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8330276-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect layer insulating film that is formed on the interlayer insulating film and second copper interconnects that are embedded in the second interconnect layer insulating film. The first and second interconnect layer insulating films include first and second low dielectric constant films, respectively. The interlayer insulating film has higher mechanical strength than the first and second interconnect layer insulating films. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110648993-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210099546-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I724434-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9355955-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110648993-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102413283-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020006060-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069526-B2 |
| priorityDate |
2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |