http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8330193-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
filingDate 2008-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7badda8b1a06cb53f3d0834af1d3f69
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publicationDate 2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8330193-B2
titleOfInvention Silicon oxide film, production method therefor and semiconductor device having gate insulation film using the same
abstract The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO2 in the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)×(peak height) in an infrared absorption spectrum, the integrated intensity of a CO2-attributed peak which appears in the vicinity of a wave number of 2,340 cm−1 is 8E-4 times or more with respect to the integrated intensity of an SiO2-attributed peak which appears in the vicinity of a wave number of 1,060 cm−1.
priorityDate 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002261285-A
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Total number of triples: 33.