| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_823f367c8fa1ada1732a09f5349ea4d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eaf60fa19ac29894573b628052b8b21a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7699bbd968dcb395bba07961db83d2b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d3c1c1e0d3026464d2bb7a8874f38ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_77cd27aa1528fe732a90ecf521dd62ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e24d7086eba2f4183c313d5eb679f89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e94e708dadc7e06262765b676d455e8b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e019769f0140a89a3f6ab5d568a75aa9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7555d92815b7208bb06d064e6533916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d37036750e43d6985cb8a5be380b7a7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79680e1249a7ffe45f5ef0e822581f59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47aba7bba430887892bd1cf4f84404ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bd5d0406867384259a29a99eeff7a26 |
| publicationDate |
2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8330144-B2 |
| titleOfInvention |
Semi-polar nitride-based light emitting structure and method of forming same |
| abstract |
A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10630050-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11201452-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11677213-B1 |
| priorityDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |