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publicationDate 2012-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8324087-B2
titleOfInvention Scalable light-induced metallic to semiconducting conversion of carbon nanotubes and applications to field-effect transistor devices
abstract Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer.
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