| abstract |
A TFT is provided which includes on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a mean square interface roughness between the gate insulating layer and the active layer is less than 2 nm, a carrier concentration of the active layer is 1×10 15 cm −3 or more, and a film thickness of the active layer is 0.5 nm or more and less than 20 nm. A TFT is provided which has high field effect mobility and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided. |