| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c26652c31bd3064b5eb937d35844e2b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a403a3afd4229f6a9375e8253c83455a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed89ca88042d3b6f7afc21d7b6dd7b87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe190b94f9c90f2c5ea06c8440dfbcd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81f40dfecda6768222873e6c82709353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f93ae32d57398b2e7fbc4ebf648a8b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcc574845cf5cc608a0d86685b70066d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26593
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-00 |
| filingDate |
2011-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33667d2e7f1c798c6f48b7d67f1a8008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59959493ca758de7832b82de0c838b77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf2074f71ea57399eb9d78433b3e7bf8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66c212abb322678f036f57c98be3a80e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6333be8b9850353d53bb6140931f3e84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d3535377b5b37cfc8fc68b221aba81 |
| publicationDate |
2012-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8319196-B2 |
| titleOfInvention |
Technique for low-temperature ion implantation |
| abstract |
A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9646893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021175102-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9378992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9607803-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978620-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008138178-A1 |
| priorityDate |
2006-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |