| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e91de6065e44c3a813d8a7df114d314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a556f5d90f9b466db36334a02efaa40e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e9d0325c1be53d049a053a5c509296a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-3187 |
| filingDate |
2009-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b4a3d3771ef7d60cade48b8cf430046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f592bd02535c14da37133a5b12716f36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_475b6989be78d19a16f0848c6448e545 |
| publicationDate |
2012-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8314625-B2 |
| titleOfInvention |
Built-in compliance in test structures for leakage and dielectric breakdown of dielectric materials of metallization systems of semiconductor devices |
| abstract |
In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event. |
| priorityDate |
2008-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |