| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d21cbff64022f95c237c0bd3ec8656ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd74b96b946a6dc6a0a02ec5baea74fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b46a57805cefee3569b516200ea88eda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2915e68bf9989909fd126213aaa3664 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2562983ef43030228ca9ec933df318b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e340bb230c336ebff3af32b3b88e404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d203a808f79032f9f02202e22625c787 |
| publicationDate |
2012-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8309438-B2 |
| titleOfInvention |
Synthesizing graphene from metal-carbon solutions using ion implantation |
| abstract |
A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012088039-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9882008-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923567-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8597738-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8625064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014106514-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10181516-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946864-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593763-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012301095-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8975113-B2 |
| priorityDate |
2009-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |