| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e978eaed6e9951611d77c9f85eaa5b1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa6cb38394f9e6248b475a27ddfa2798
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_181fc3a29850b4d3f8a94142ab76c7b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_435f7fafc4b931eae59de228af7272de |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3404 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2006-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42e10bede321c22e9f482ba110d09b63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24fb843abea3dff6d381e849f5a6c576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f448b64789179e4147e304e924b1e87a |
| publicationDate |
2012-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8304790-B2 |
| titleOfInvention |
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
| abstract |
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer. |
| priorityDate |
1995-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |