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filingDate 2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8e108cc38be369866f9db9a54575d76
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publicationDate 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8288257-B2
titleOfInvention Doping profile modification in P3I process
abstract Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.
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