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filingDate 2011-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83d44499ea903c425e8d2a88270f5d00
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publicationDate 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8288249-B2
titleOfInvention Method for manufacturing SOI substrate
abstract Manufacturing cost of an SOI substrate is reduced. Yield of an SOI substrate is improved. A method for manufacturing an SOI substrate includes the steps of irradiating a single crystal semiconductor substrate with ions to form an embrittled region in the single crystal semiconductor substrate, bonding the single crystal semiconductor substrate to a base substrate with an insulating film therebetween, and separating the single crystal semiconductor substrate and the base substrate at the embrittled region to form a semiconductor layer over the base substrate with the insulating film therebetween. In the step of forming the embrittled region, ion species which are not mass-separated are used as the ions and a temperature of the single crystal semiconductor substrate is set to 250° C. or higher at the time of irradiation with the ions.
priorityDate 2010-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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