http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288194-B2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e866cbaac3e3c3c1b016cd0fb871ab7d
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
filingDate 2011-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd85411dba8f568699a7bbd2daab59ca
publicationDate 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8288194-B2
titleOfInvention Method of fabricating thin film transistor structure
abstract A method of fabricating a thin film transistor (TFT) is provided. The method comprises the steps of providing a substrate with a gate electrode formed thereon; forming an insulating layer on the substrate and covering the gate electrode; forming an intrinsic amorphous silicon layer (intrinsic a-Si layer) on the insulating layer; forming an etch-stop layer on the intrinsic amorphous silicon layer, and the etch-stop layer positioned correspondingly to the gate electrode; treating the etch-stop layer to form an oxide layer, and the oxide layer covering the etch-stop layer; forming a n+ a-Si layer above the intrinsic amorphous silicon layer, and the n+ a-Si layer covering partial surface of the etch-stop layer and the oxide layer separating a sidewall of the etch-stop layer and the n+ a-Si layer; and forming a conductive layer on the n+ a-Si layer.
priorityDate 2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6028652-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6413846-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10326748-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5811325-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6465286-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6387740-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17358
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24823
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6393
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559478
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25516
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527022
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID66241
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559561
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129327014
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419531083
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450502002
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID28179

Total number of triples: 43.