http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288194-B2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e866cbaac3e3c3c1b016cd0fb871ab7d |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate | 2011-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd85411dba8f568699a7bbd2daab59ca |
publicationDate | 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-8288194-B2 |
titleOfInvention | Method of fabricating thin film transistor structure |
abstract | A method of fabricating a thin film transistor (TFT) is provided. The method comprises the steps of providing a substrate with a gate electrode formed thereon; forming an insulating layer on the substrate and covering the gate electrode; forming an intrinsic amorphous silicon layer (intrinsic a-Si layer) on the insulating layer; forming an etch-stop layer on the intrinsic amorphous silicon layer, and the etch-stop layer positioned correspondingly to the gate electrode; treating the etch-stop layer to form an oxide layer, and the oxide layer covering the etch-stop layer; forming a n+ a-Si layer above the intrinsic amorphous silicon layer, and the n+ a-Si layer covering partial surface of the etch-stop layer and the oxide layer separating a sidewall of the etch-stop layer and the n+ a-Si layer; and forming a conductive layer on the n+ a-Si layer. |
priorityDate | 2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.