| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43516d1692d4878c0dbc4ffdb99eeec1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_30511ee0880976494a00f5bfbde66974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_272905bfba089b052b60204ba0612b54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbf040146039cf0f778150b7d5ef72d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03921
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0392 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2010-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebbb1bf5e92ce28bf1d16d9ed1e5ade7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cf0a4b2f1cab1b3079c888bea725c2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73a3bb9b9e132444331c8377443fc735 |
| publicationDate |
2012-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8273595-B2 |
| titleOfInvention |
Silicon thin film deposition for photovoltaic device applications |
| abstract |
The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987583-B2 |
| priorityDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |