http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8269253-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c9530a9fda7366ca2a842f3a491edef |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-102 |
| filingDate | 2009-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a5f2cbeb4db06fa74226ed453b60da1 |
| publicationDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8269253-B2 |
| titleOfInvention | Rare earth enhanced high electron mobility transistor and method for fabricating same |
| abstract | According to one embodiment, a high electron mobility transistor (HEMT) comprises an insulator layer comprising a first group III-V intrinsic layer doped with a rare earth additive. The HEMT also comprises a second group III-V intrinsic layer formed over the insulator layer, and a group III-V semiconductor layer formed over the second group III-V intrinsic layer. In one embodiment, a method for fabricating a HEMT comprises forming a first group III-V intrinsic layer and doping the first group III-V intrinsic layer with a rare earth additive to produce an insulator layer. The method also comprises forming a second group III-V intrinsic layer over the insulator layer, and further forming a group III-V semiconductor layer over the second group III-V intrinsic layer. A two-dimensional electron gas (2DEG) is formed at a heterojunction interface of the group III-V semiconductor layer and the second group III-V intrinsic layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017148906-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222969-B2 |
| priorityDate | 2009-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.