http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8268535-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d245366834f29a16bfa6683a6aa8adc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00eeaf1029b145bf8124e008dfa7d33f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2011-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_693d3abbcc50d96cd573e3940d8c8cab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0a702c534b67117ea8287e41a64ff9e |
| publicationDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8268535-B2 |
| titleOfInvention | Pattern formation method |
| abstract | After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern. |
| priorityDate | 2007-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.