| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_839285a28c07fde89d0e3a2ada29293d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e0fa04cda8dd2bb4568d58d25d611d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_91d57fa44f4342cf6dea6cd6c6b04d8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a013f27aee93b16ee05c95b0d161b734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ee33b0e3e7398cf6fc957eeee59d510
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d15362964aab068dab4bc6ce43c62b5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03529 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate |
2008-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07665e78b14358b9740a42662c00d79e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dadddafea3cefe8afb3e20299a3c179c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3b4b800f976157f83f50975002d0a5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcaca0fb48d050c48137ff765e2a154 |
| publicationDate |
2012-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8263860-B2 |
| titleOfInvention |
Silicon photovoltaic device with carbon nanotube cable electrode |
| abstract |
A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate. |
| priorityDate |
2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |