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filingDate 2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8257501-B2
titleOfInvention Plasma doping device with gate shutter
abstract In a plasma doping device according to the invention, a vacuum chamber ( 1 ) is evacuated with a turbo-molecular pump ( 3 ) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device ( 2 ) in order to maintain the inside of the vacuum chamber ( 1 ) to a predetermined pressure with a pressure regulating valve ( 4 ). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source ( 5 ) to a coil ( 8 ) provided in the vicinity of a dielectric window ( 7 ) opposed to a sample electrode ( 6 ) to generate inductive-coupling plasma in the vacuum chamber ( 1 ). A high-frequency power source ( 10 ) for supplying a high-frequency power to the sample electrode ( 6 ) is provided. Uniformity of processing is enhanced by driving a gate shutter ( 18 ) and covering a through gate ( 16 ).
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