| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7d6fe4390082ddcb03ebf3569b832819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08ddc4ce8c00208403b84c54c57fe94a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b188980973397a91d0b6db6be0f2be5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6641fb7c8cdf0999812dce8bf3ada68f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8228 |
| filingDate |
2010-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f054947449336ceee4f197e8d2306f2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d196991670b75fb1a10a61567784df9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5aa38ae89c6c5f3c239dd2b505ed4f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaf7cb6e717961470d8337fc6a1a5115 |
| publicationDate |
2012-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8252655-B2 |
| titleOfInvention |
Method of forming semiconductor cell structure, method of forming semiconductor device including the semiconductor cell structure, and method of forming semiconductor module including the semiconductor device |
| abstract |
In a method of forming a semiconductor cell structure, a first insulating layer may be formed on a semiconductor substrate. A connection pattern may be formed in the first insulating layer. Second and third insulating layers may be sequentially formed on the connection pattern. The third insulating layer may be etched at least twice and the second insulating layer may be etched at least once to form a through hole in the second and third insulating layers. The through hole may expose the connection pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018086-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016233161-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157829-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742217-B2 |
| priorityDate |
2009-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |