| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_05bd088425aacb0b5493f433f0e59759
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_546cd3439e8e6789f927928be0b80e6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab850e8771c4c3a5e50a3a29f8346ce5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8a9982b1666c54b5bf02d6c944891e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de0c9fdbc98b61ba6c4cbf2fe63b99f4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2009-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c10a996d0e452b07cc7b0be00ca6e507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f304e4a4d2aca082b67acd26f5e2db99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce3108148624130d0167e56f3d9bdb17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6e9e3918c1c415bd015201d29d6c2fc |
| publicationDate |
2012-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8242033-B2 |
| titleOfInvention |
High throughput recrystallization of semiconducting materials |
| abstract |
Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347794-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221832-A1 |
| priorityDate |
2009-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |