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filingDate 2010-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f8be9396697f69b7c559b0971a2839b
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publicationDate 2012-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8237272-B2
titleOfInvention Conductive pillar structure for semiconductor substrate and method of manufacture
abstract A semiconductor component formed on a semiconductor substrate is provided. The semiconductor substrate has a first surface and a second surface. The semiconductor substrate includes a plurality of devices on the first surface. A plurality of through silicon vias (TSVs) in the semiconductor substrate extends from the first surface to the second surface. A protection layer overlies the devices on the first surface of the semiconductor substrate. A plurality of active conductive pillars on the protection layer have a first height. Each of the active conductive pillars is electrically connected to at least one of the plurality of devices. A plurality of dummy conductive pillars on the protection layer have a second height. Each of the dummy conductive pillars is electrically isolated from the plurality of devices. The first height and the second height are substantially equal.
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