| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b31ed599e9177100432b71c4bbec79ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82144e11a14a48d5c0f9597159bd40a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b56969f0a9af4c04e8e8da060dbc3e9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61167891adb8537a4e0c129f76a6617a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8293240709b65db564f799f57b74dd07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf76901f21d89459d4ffe56f2570a1b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df05acc3c77ed67bcba9793d01959bbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5d1df33810f23868939faf1f7f7d69a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_01b050d7539b61ab585641c75793d152 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2009-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_196c9a2598c7d375baf9300466e954d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f6bd0e085d317964a2afa891b0daa46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_113188cb9eddd85363506178bd327203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d9031471077244c901c819988e07070
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efee5999e5eaf6292abc07d31efc31f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_737cdeabbe17c0e88af7f3ba6ccd9e1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8a765ff688ee1990814b8d524ba1743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ecaeca8dc8abc46da802a52ad567160
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_407b7c60ad2664a93990d561d76256b1 |
| publicationDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8232197-B2 |
| titleOfInvention |
Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed |
| abstract |
An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF 3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106024617-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106024617-B |
| priorityDate |
2005-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |