| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_401d75698c4a5003439f6d16b9c0f1bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_07608b28cc811a60e9377428074514bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddad49c7e15b780da1abe3211e336712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31a3eb6a38921da6aae78ba1a29fd159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b58e6f4ec607e83017d6fcd0e8bbe73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88c5699433ed0b4d77b30299503f21d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aff9d2b573a3dcd3fc2c61c93a0815bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5ee22846224d684aeb36b6b5512a9a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_378f8a83bd596063938647bbafd53bb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bd751099cca8f7d6a1571c648aadcca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b6c2fa9e8f4021d012f2968ba44e66d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11f9a22debfebcb150670ff98fb16eaf |
| publicationDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8232173-B2 |
| titleOfInvention |
Structure and design structure for high-Q value inductor and method of manufacturing the same |
| abstract |
Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012193744-A1 |
| priorityDate |
2010-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |