Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51c657e348889b290e1a2616370a59f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51ea83920fa687e50007860670ffd5ef |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
filingDate |
2005-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0abdda1b1642196f4c7bad6e66cfdb61 |
publicationDate |
2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8232135-B2 |
titleOfInvention |
Organic transistor |
abstract |
An organic transistor comprising source and drain electrodes; a gate electrode; an organic insulating layer between the gate electrode and the source and drain electrodes; and an organic semiconductive region between the insulating layer and the source and drain electrodes; wherein the organic semiconductive region comprises (a) a high mobility layer of an organic semiconductor and (b) a blocking layer of organic material positioned between the high mobility layer and the source and drain electrodes, in which the ionization potential of the organic material of the blocking layer exceeds the workfunction of the source and drain electrodes so as to inhibit charge injection from the source electrode into the blocking layer in the off-state. |
priorityDate |
2004-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |