| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_692dc6c787f1851a265740f50c02c746
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0977fcbda1c2d549c5bf2e1f031188b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d645a98bf797921a20c24c579ebd363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_63473b8e92e4f58df89a4bc91881fc41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2ee6b744903d45953d87311065738a93 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14625 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f07d2ad0b7d139a2f2940b305b82c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e2760eb5c13de154a6c2f98013554bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_011304c6005ea758fc3cbae9f3ca1569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_928f569808f92dce3762c351184e40dc |
| publicationDate |
2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8227736-B2 |
| titleOfInvention |
Image sensor device with silicon microstructures and fabrication method thereof |
| abstract |
An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device. |
| priorityDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |