Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16db685ec595e3ecbb7e7cccc3fda92d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0738 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0626 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-036 |
filingDate |
2007-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45c071b3c05326035210f2a06dd06a8f |
publicationDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8212254-B2 |
titleOfInvention |
Thin film transistor, manufacturing method thereof, and semiconductor device |
abstract |
By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a semiconductor film formed over a substrate with linear laser light, a phase-shift mask in which trenches are formed in a stripe form is used. The stripe-form trenches formed in the phase-shift mask are formed so as to make a nearly perpendicular angle with a major axis direction of the linear laser light. CW laser light is used as the laser light, and a scanning direction of the laser light is nearly parallel to a direction of the stripe-form trenches (grooves). By changing luminance of the laser light periodically in the major axis direction, a crystal nucleation position in a semiconductor that is completely melted can be controlled. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11672148-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10748943-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872947-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879331-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763322-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004925-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854697-B2 |
priorityDate |
2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |