| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8216483372192ba4a0fda97f087e91cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e94e708dadc7e06262765b676d455e8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5efa7133fb1830ba6edb9192d018b8f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68 |
| filingDate |
2009-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efd74929ac971acbe1011d801504f9ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_580c2630cc7b29e62fb8c931218c8949 |
| publicationDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8211782-B2 |
| titleOfInvention |
Printed material constrained by well structures |
| abstract |
A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively deposited over at least a portion of the second patterned contact layer to form first and second wall structures such that at least a portion of the second patterned contact layer is exposed, the first and second wall structures defining a well therebetween. Electrically conductive or semiconductive material is deposited within the well, for example by jet-printing, such that the first and second wall structures confine the conductive or semiconductive material and prevent spreading and electrical shorting to adjacent devices. The conductive or semiconductive material is in electrical contact with the exposed portion of the second patterned contact layer to form, e.g., an operative transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014061869-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8653516-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016240558-A1 |
| priorityDate |
2009-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |