http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8206788-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
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filingDate 2007-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_577d9065c137f09dee9c6402ac14a0de
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publicationDate 2012-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8206788-B2
titleOfInvention Method for treating a damaged porous dielectric
abstract In the manufacture of electronic devices that use porous dielectric materials, the properties of the dielectric in a pristine state can be altered by various processing steps. In a method for restoring and preserving the pristine properties of a porous dielectric layer, a substrate is provided with a layer of processed porous dielectric on top, whereby the processed porous dielectric is at least partially exposed. A thin aqueous film is formed at least on the exposed parts of the processed porous dielectric. The exposed porous dielectric with the aqueous film is exposed to an ambient containing a mixture comprising at least one silylation agent and dense CO 2 , resulting in the restoration and preservation of the pristine properties of the porous dielectric.
priorityDate 2007-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 43.