| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac3f4ae633f03dad0071a6c7724730f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20268f59ca53fdcbb5af882a8e826540
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7041e69d917f73cd4955b969c8ccbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbabecc360f0bd3256da53825dd2cd90 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_285b16583cb6eb51b4daeadd85ab825e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5f9af085af5cca22efff1a38e67925c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b03bb495f25a344ddb83f3b2d01bc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81bded217ae014c0ab707c0ffb841159 |
| publicationDate |
2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8198685-B2 |
| titleOfInvention |
Transistors with metal gate and methods for forming the same |
| abstract |
A semiconductor device includes at least one first gate dielectric layer over a substrate. A first transition-metal oxycarbide (MC x O y ) containing layer is formed over the at least one first gate dielectric layer, wherein the transition-metal (M) has an atomic percentage of about 40 at. % or more. A first gate is formed over the first transition-metal oxycarbide containing layer. At least one first doped region is formed within the substrate and adjacent to a sidewall of the first gate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349823-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013295740-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015129972-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9041119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8563415-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011260255-A1 |
| priorityDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |