| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6811a5adf290b48d13c4ecff51b8609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5e5259af2991f35d81666b4c76c4308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f3e5fce8dfd83a8dfe967ed5a7ad20c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate |
2011-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86494f67f1a1a30d0dae192b1a3760f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_455d5d49a42f1a85086eef08a9d2fe99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1b1c3dbc011d992338af2bcfe258efe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9c612f6b44fcf30b76830b01b746679 |
| publicationDate |
2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8198629-B2 |
| titleOfInvention |
Photoelectric conversion device and method for manufacturing the same |
| abstract |
To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012217993-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9754996-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8829522-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8963579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257561-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011147755-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009293954-A1 |
| priorityDate |
2008-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |