| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b32584afc6d9e2616b5195f433a1ed0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3df0210594c69c23473769d30b15d6a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_07181fc5e5c479d8a347c4e91633da4b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a4c39364d21ce3612e5e745dc27cde6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7764bfd22a652eb38b3a5a25a8254b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b90b0afeb9bf67d9cf1179a6cccef862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_428cf517508ecb7bea6f408fc9b82953 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2010-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b856e5b9e0c35ecfd1c99d608700901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98080c2edc43ebb2bbe101bfe4f619a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1adb09c0462f7bc257a4a87b7c411fc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d9aae8e00bee16be368a71c1a036d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09fc07c64b53114e87d3dac04784dce2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9909562d375a756bf55082160175916 |
| publicationDate |
2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8198114-B2 |
| titleOfInvention |
Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
| abstract |
A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. |
| priorityDate |
2006-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |