| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f87b922f9a0d945a0392dacd2e39817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e19f02de9b11158342296ca2bf61d1ef |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03923 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38 |
| filingDate |
2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e0fcf9cde4dfa855923bf0dfa03b42f |
| publicationDate |
2012-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8193028-B2 |
| titleOfInvention |
Sulfide species treatment of thin film photovoltaic cell and manufacturing method |
| abstract |
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a sulfide species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501521-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651324-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8476104-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658532-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10672941-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8394662-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396218-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786807-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109761-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10431709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153387-B2 |
| priorityDate |
2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |