| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6411b47727be9d12ede7bc13ac8f825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f6047f9773aa89e064f8f074c521579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe8da4d89f669ca6672bcae5959e65f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8bde2bf9e5ad8c63a2f2be7a561eb471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18338 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-479
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2008-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d09e9238e5a6398913cca69d1af412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1003015626ad76d4e37578e9f514c4a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5db50bd3a25290b29042ddf097e2d58b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85888aaeb5f560aa167f98726b2553ff |
| publicationDate |
2012-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8183074-B2 |
| titleOfInvention |
Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly |
| abstract |
A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017012409-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153613-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10833479-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658463-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941662-B2 |
| priorityDate |
2007-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |