http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8175128-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a47ec2e22e69e50d8b877ad578aa9728 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 2010-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b4ecd933df069141f086499b8af5a7f |
| publicationDate | 2012-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8175128-B2 |
| titleOfInvention | Semiconductor laser element and semiconductor laser device |
| abstract | A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer. |
| priorityDate | 2009-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.