| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8dcffd50a676272d32c5a5affa3476c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e9a203d65d8ebdface31ff41cfc7912
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a74af850cda93ef1754c7c26ebf8f12f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98bae2cbd0b7bf09361b52a0413ac2be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_461406b5e057508d950bd3c45fe88dab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0fdc4270a2791c397472067e7751cad8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa78807393933f7822f91c2b307e693c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2011-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f97f704a0526b05054d307f055386a07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dec70898f7caae3af09e78106b488cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa735512c91fc35067315ed616bb532e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75bf1dd82d706856ae0d259061bc6dff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a47cf43a64742dc00b07d11017591daa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_335f181f267d4966ac62ab3beeabd1ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d579cf2cd1d4ef5d39e556c57b3cbeb |
| publicationDate |
2012-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8168474-B1 |
| titleOfInvention |
Self-dicing chips using through silicon vias |
| abstract |
Systems and methods simultaneously form first openings and second openings in a substrate. The first openings are formed smaller than the second openings. The method also simultaneously forms a first material in the first openings and the second openings. The first material fills the first openings, and the first material lines the second openings. The method forms a second material different than the first material in the second openings. The second material fills the second openings. The method forms a plurality of integrated circuit structures over the first material and the second material within the second openings. The method applies mechanical stress to the substrate to cause the substrate to split along the first openings. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9461004-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2571203-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017069578-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2571203-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114388366-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462575-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290588-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114388366-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013236001-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818613-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935055-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070741-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014167209-A1 |
| priorityDate |
2011-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |