| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8b7ce0a5e2290deb9b124ef4412f33c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9e51c2da94bfd21eee4aad0aade7645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5ab17ab18169759e4277e102873a395 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b68b284a6ccd6cf13bc2a933cbab581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9c3759760109305838924770fda97e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa199240f8e57083f9ff2e916d8538f7 |
| publicationDate |
2012-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8153523-B2 |
| titleOfInvention |
Method of etching a layer of a semiconductor device using an etchant layer |
| abstract |
A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064801-B1 |
| priorityDate |
2008-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |