| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dfae9690be8613997c05eff61c6622c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33b269258832729b2871e336a3bf6643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31a3121798a1cf04738057b6d7c59731
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2009-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad6f282a7cb420c35ffb7b5034026f76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52c2963606677cbc676db84eddeed6a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6665fa8596c451e924c11b3fdd10dd07 |
| publicationDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8138059-B2 |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask. |
| priorityDate |
2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |