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filingDate 2008-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6efb777f7e6c6e7d4eaa9314c4918227
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publicationDate 2012-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8136017-B2
titleOfInvention Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC method
abstract Embodiments of the invention provide a multi-layer semiconductor memory device and a related error checking and correction (ECC) method. The multi-layer semiconductor memory device includes first and second memory cell array layers, wherein the first memory cell array layer stores first payload data. The multi-layer semiconductor memory device also includes an ECC engine selectively connected to the second memory cell array layer and configured to receive the first payload data, generate first parity data corresponding to the first payload data, and store the first parity data exclusively in the second memory cell array layer.
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priorityDate 2007-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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