| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73e2e1944f2dbf0155e4c91e7365eed5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b96ed3f2bbdbedb5434b66bcee2711a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f6fd8a92f55dca0f111bd7c5858ae83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12cf1f8b4e2ff1959312510691750e38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34 |
| filingDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_944554ca50e7f74742b7b1f9725b5e18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46c467cb7f29351fd01fd0dd363b4cb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10e24e044d99b61361f476f7e37b0be4 |
| publicationDate |
2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8125824-B1 |
| titleOfInvention |
Nanotube random access memory (NRAM) and transistor integration |
| abstract |
A nanotube random access memory (NRAM) structure is provided. The structure includes a substrate, a gate electrode disposed in the substrate, and a first nanotube fabric disposed on the substrate. The first nanotube fabric has a channel region spaced apart from the gate electrode by a portion of the substrate. The structure also includes a drain contact contacting the first nanotube fabric. The structure also includes a second nanotube fabric disposed on the substrate, and is adjacent and connected to the first nanotube fabric. The structure also includes a source contact contacting the second nanotube fabric. The first nanotube fabric is a high-voltage fabric compared to the second nanotube fabric such that when a voltage is applied across the first nanotube fabric and the second nanotube fabric via the drain contact and the source contact, the second nanotube fabric is permitted to switch without switching the first nanotube fabric. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105097904-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110635025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224448-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110635025-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545641-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I563679-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I550878-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I553883-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10177199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379166-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11121335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011012081-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105097904-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192930-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8581346-B2 |
| priorityDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |