| abstract |
An IC chip for a high frequency region, particularly a packaged substrate in which no malfunction or error occurs even if 3 GHz is exceeded. A conductive layer on a core substrate is formed at a thickness of 30 μm and a conductor circuit on an interlayer resin insulation layer is formed at a thickness of 15 μm. By thickening the conductive layer, the volume of the conductor can be increased and resistance can be reduced. Further, by using the conductive layer as a power source layer, the capacity of supply of power to an IC chip can be improved. |