| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e9dc586f5dff34c61782d97df964b75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_19f24de72b4a0fe23a07b349c5b25a85 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6677 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3107 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-02 |
| filingDate |
2009-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_714de6d58b579faad97f10877fde1c4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_757892566b5bee6b52d5a805e96aa736 |
| publicationDate |
2012-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8102034-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method of the same |
| abstract |
With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349752-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9893196-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9882062-B2 |
| priorityDate |
2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |