| abstract |
A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH 4 ) derivatives having the molecular formula SiRR 1 R 2 R 3 , disiloxane derivatives having the molecular formula R 4 R 5 R 6 —Si—O—Si—R 7 R 8 R 9 , and trisiloxane derivatives having the molecular formula R 10 R 11 R 12 —Si—O—Si—R 13 R 14 —O—Si—R 15 R 16 R 17 where R and R 1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same. |