http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8088649-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea9bf1e4345c798a4222f71041d8394a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bac6d4a1e43858d216fa948486a76aad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate | 2007-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cafc1cda5b445f0ac8c9cef87a39af4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201dbfe1a4cb3f64f7da9439b233949b |
| publicationDate | 2012-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8088649-B2 |
| titleOfInvention | Radiation-emitting semiconductor body with carrier substrate and method for the producing the same |
| abstract | A radiation-emitting semiconductor body with a carrier substrate and a method for producing the same. In the method, a structured connection is produced between a semiconductor layer sequence ( 2 ) and a carrier substrate wafer ( 1 ). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks ( 200 ) by means of cuts ( 6 ) through the semiconductor layer sequence, and the carrier substrate wafer ( 1 ) is subdivided into a plurality of carrier substrates ( 100 ) by means of cuts ( 7 ) through the carrier substrate wafer ( 1 ). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack ( 200 ) is connected to one and only one associated carrier substrate ( 100 ). In addition, at least one cut ( 7 ) through the carrier substrate wafer is not extended by any of the cuts ( 6 ) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence. |
| priorityDate | 2006-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.