| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c75fc34b89fc171cf0853a04692f8cd6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0ed9fbe5f6a66182c63bc3c9aaf6e04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 |
| filingDate |
2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e593e6c22bd373a71b74028ba148090f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be71dfe1ea28ce89f9cfee58b04c8048 |
| publicationDate |
2011-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8084373-B2 |
| titleOfInvention |
Manufacturing method of semiconductor device for enhancing the current drive capability |
| abstract |
A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In step 1, a semiconductor substrate is exposed to monosilane (SiH 4 ). Then, in step 2, the remaining monosilane (SiH 4 ) is emitted. In step 3, the semiconductor substrate is exposed to nitrous oxide plasma. A desired silicon oxide film is formed by repeating one cycle including steps 1 to 3 until a necessary thickness of the film is obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012309205-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8466073-B2 |
| priorityDate |
2009-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |