| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f236f0d95cca1ac8097784638cc29dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_83a43a52efcdbd4fb923433c3f9e8e2a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cdd94f212dc7aef02fc1dcf28fa9b4fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_904eabf98dbd462bee1cea94b6a35b8d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94653b7c4ce5a5a828364a2822d6d625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45530b4094b0d40746a7b67126e94cc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6583aaed7fab4e2f3b8871d9b2442dd5 |
| publicationDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8080438-B2 |
| titleOfInvention |
Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor |
| abstract |
A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015333269-A1 |
| priorityDate |
2005-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |