http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8077525-B2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ff93ca28fcabb7570dace046664abb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34 |
filingDate | 2009-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35c37387a343e5a614f8ce7fc555bef1 |
publicationDate | 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-8077525-B2 |
titleOfInvention | Nonvolatile semiconductor memory device |
abstract | A nonvolatile semiconductor memory device includes: a memory cell array configured to have a plurality of blocks arranged thereon, each of the blocks being configured by an assembly of NAND cell units, each of the NAND cell units including a plurality of nonvolatile memory cells connected in series and word lines configured to commonly connect control gates of the memory cells. A data erase operation is executed by first applying a pre-charge voltage to the word lines, then setting to a floating state the word lines in a non-selected block where erasure of data is not to be executed, applying a certain voltage to the word lines in a selected block where erasure of data is to be executed and applying an erase voltage to a well where the memory cell array is formed, thereby altering a threshold voltage of the memory cells in the selected block. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9514828-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015170752-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9111627-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8274837-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9455009-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I478173-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010277977-A1 |
priorityDate | 2008-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.