| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b962615313fef3b3057c7dd2ab3c8c62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 |
| filingDate |
2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68118bbee3c308dd7b70a7d841d9aac6 |
| publicationDate |
2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8058652-B2 |
| titleOfInvention |
Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element |
| abstract |
A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the island semiconductor film, and a method for manufacturing the semiconductor device are disclosed. The manufacturing costs can be suppressed by forming the island semiconductor film which is to be a channel formation region and the semiconductor film which is to be a source or drain region without using a doping apparatus. The source or drain region is in contact with the side surface of the island semiconductor film which is the channel formation region, a depletion layer is broaden not only in a film thickness direction but also in the crosswise direction and an electric field due to drain voltage is relieved. Therefore, a semiconductor device with high reliability can be manufactured. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8940560-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189676-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010155731-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8569758-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8716708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905702-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9053983-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466726-B2 |
| priorityDate |
2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |