| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31507 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2009-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b829eae2950a4a964c7f80e65caa17d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b62b0f0b2c3544b20f63f2514598f12 |
| publicationDate |
2011-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8053772-B2 |
| titleOfInvention |
Hydrazine-free solution deposition of chalcogenide films |
| abstract |
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8803141-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011240932-A1 |
| priorityDate |
2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |