Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-649 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
filingDate |
2006-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b55df11279f31641fc2b5d6d98cc6ac2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86c04d9e6004b559b4872b042c2fde8c |
publicationDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8049208-B2 |
titleOfInvention |
Organic semiconductor device having composite electrode |
abstract |
It is an object of the present invention, in a case of using a conductive material as part of an electrode for an organic transistor, to provide an organic transistor having a structure whose characteristics are not controlled by the work function of the conductive material. Moreover, it is other objects of the present invention to provide an organic transistor having favorable carrier mobility and to provide an organic transistor which is excellent in durability. A composite layer containing an organic compound and an inorganic material is used for an electrode for an organic field effect transistor, that is, at least part of one of a source electrode and a drain electrode in the organic field effect transistor. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009250690-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008048183-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031506-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8569742-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290720-B2 |
priorityDate |
2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |