Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
filingDate |
2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e58280734063e355ddbca26a38154bcd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef01edac0f2cb613f4640fec5257d302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed2fd49dfd1b77b969547970e19956b0 |
publicationDate |
2011-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8043959-B2 |
titleOfInvention |
Method of forming a low-k dielectric layer with improved damage resistance and chemical integrity |
abstract |
A method of forming a low-k dielectric layer or film includes forming a porous low-k dielectric layer or film over a wafer or substrate. Active bonding is introduced into the porous low-k dielectric layer or film to improve damage resistance and chemical integrity of the layer or film, to retain the low dielectric constant of the layer and film after subsequent processing. Introduction of the active bonding may be accomplished by introducing OH and/or H radicals into pores of the porous low-k dielectric layer or film to generate, in the case of a Si based low-k dielectric layer or film, Si—OH and/or Si—H active bonds. After further processing of the low-k dielectric film, the active bonding is removed from the low-k dielectric layer or film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707165-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417602-B2 |
priorityDate |
2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |